收藏本站
IRFP140N
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
Min.
Typ. Max. Units
Conditions
V (BR)DSS
Drain-to-Source Breakdown Voltage
100
––– ––– V V GS = 0V, I D = 250μA
? V (BR)DSS / ? T J
R DS(on)
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
–––
–––
0.11 –––
––– 0.052
V/°C
?
Reference to 25°C, I D = 1mA ?
V GS = 10V, I D = 16A ?
44 ––– R G = 5.1 ?
V GS(th)
g fs
I DSS
I GSS
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
2.0
11
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 4.0 V V DS = V GS , I D = 250μA
––– ––– S V DS = 50V, I D = 16A ?
––– 25 V DS = 100V, V GS = 0V
μA
––– 250 V DS = 80V, V GS = 0V, T J = 150°C
––– 100 V GS = 20V
nA
––– -100 V GS = -20V
––– 94 I D = 16A
––– 15 nC V DS = 80V
––– 43 V GS = 10V, See Fig. 6 and 13 ??
8.2 ––– V DD = 50V
39 ––– I D = 16A
ns
33 ––– R D = 3.0 ?, See Fig. 10 ??
L D
L S
Internal Drain Inductance
Internal Source Inductance
–––
––––––
5.0
13
–––
– – – – – –
nH
Between lead,
6mm (0.25in.)
from package
and center of die contact
G
D
S
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 1400 ––– V GS = 0V
––– 330 ––– pF V DS = 25V
––– 170 ––– ? = 1.0MHz, See Fig. 5 ?
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I S
I SM
V SD
t rr
Q rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ??
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
–––
–––
–––
–––
–––
–––
–––
–––
170
1.1
33
110
1.3
250
1.6
A
V
ns
μC
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T J = 25°C, I S = 16A, V GS = 0V ?
T J = 25°C, I F = 16A
di/dt = 100A/μs ??
G
D
S
Notes:
? Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
? V DD = 25V, starting T J = 25°C, L = 2.0mH
R G = 25 ? , I AS = 16A. (See Figure 12)
2
? I SD ≤ 16A, di/dt ≤ 210A/μs, V DD ≤ V (BR)DSS ,
T J ≤ 175°C
? Pulse width ≤ 300μs; duty cycle ≤ 2%.
? Uses IRF540N data and test conditions.
www.irf.com
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
IRFP150A MOSFET N-CH 100V 43A TO-3
IRFP150N MOSFET N-CH 100V 42A TO-247AC
IRFP250 MOSFET N-CH 200V 30A TO-247AD
IRFP260 MOSFET N-CH 200V 46A TO247
IRFP264 MOSFET N-CH 250V 38A TO247
IRFP3703 MOSFET N-CH 30V 210A TO-247AC
IRFP450 MOSFET N-CH 500V 14A TO-247AD
IRFP470 MOSFET N-CH 500V 24A TO-247AD
相关代理商/技术参数
IRFP140N_R4942 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRFP140NPBF 功能描述:MOSFET MOSFT 100V 27A 52mOhm 62.7nCAC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRFP140NPBF 制造商:International Rectifier 功能描述:MOSFET
IRFP140PBF 功能描述:MOSFET N-Chan 100V 31 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRFP140R 制造商:Rochester Electronics LLC 功能描述:- Bulk
IRFP141 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
IRFP141R 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 31A I(D) | TO-247
IRFP142 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 26A I(D) | TO-247AC